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https://github.com/holub/mame
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438 lines
15 KiB
C++
438 lines
15 KiB
C++
// license:GPL-2.0+
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// copyright-holders:Couriersud
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/*
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* nld_bjt.c
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*
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*/
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#include "../solver/nld_solver.h"
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#include "nlid_twoterm.h"
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#include "../nl_setup.h"
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#include <cmath>
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namespace netlist
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{
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namespace analog
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{
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class diode
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{
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public:
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diode() : m_Is(1e-15), m_VT(0.0258), m_VT_inv(1.0 / m_VT) {}
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diode(const nl_double Is, const nl_double n)
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{
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m_Is = Is;
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m_VT = 0.0258 * n;
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m_VT_inv = 1.0 / m_VT;
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}
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void set(const nl_double Is, const nl_double n)
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{
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m_Is = Is;
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m_VT = 0.0258 * n;
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m_VT_inv = 1.0 / m_VT;
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}
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nl_double I(const nl_double V) const { return m_Is * std::exp(V * m_VT_inv) - m_Is; }
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nl_double g(const nl_double V) const { return m_Is * m_VT_inv * std::exp(V * m_VT_inv); }
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nl_double V(const nl_double I) const { return std::log1p(I / m_Is) * m_VT; } // log1p(x)=log(1.0 + x)
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nl_double gI(const nl_double I) const { return m_VT_inv * (I + m_Is); }
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private:
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nl_double m_Is;
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nl_double m_VT;
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nl_double m_VT_inv;
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};
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// -----------------------------------------------------------------------------
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// nld_Q - Base classes
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// -----------------------------------------------------------------------------
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/*! Class representing the bjt model paramers.
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*
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* This is the model representation of the bjt model. Typically, SPICE uses
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* the following parameters. A "Y" in the first column indicates that the
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* parameter is actually used in netlist.
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*
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* | NL? | name | parameter | units | default | example | area |
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* |:---:|------|-----------------------------------------------------------------------|-------|---------:|----------------:|:----:|
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* | Y | IS | transport saturation current | A | 1E-016 | 1E-015 | * |
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* | Y | BF | ideal maximum forward beta | - | 100 | 100 | |
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* | Y | NF | forward current emission coefficient | - | 1 | 1 | |
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* | | VAF | forward Early voltage | V | infinite | 200 | |
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* | | IKF | corner for forward beta high current roll-off | A | infinite | 0.01 | * |
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* | | ISE | B-E leakage saturation current | A | 0 | 0.0000000000001 | * |
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* | | NE | B-E leakage emission coefficient | - | 1.5 | 2 | |
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* | Y | BR | ideal maximum reverse beta | - | 1 | 0.1 | |
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* | Y | NR | reverse current emission coefficient | - | 1 | 1 | |
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* | | VAR | reverse Early voltage | V | infinite | 200 | |
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* | | IKR | corner for reverse beta high current roll-off | A | infinite | 0.01 | * |
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* | | ISC | leakage saturation current | A | 0 | 8 | |
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* | | NC | leakage emission coefficient | - | 2 | 1.5 | |
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* | | RB | zero bias base resistance | | 0 | 100 | * |
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* | | IRB | current where base resistance falls halfway to its min value | A | infinte | 0.1 | * |
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* | | RBM | minimum base resistance at high currents | | RB | 10 | * |
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* | | RE | emitter resistance | | 0 | 1 | * |
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* | | RC | collector resistance | | 0 | 10 | * |
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* | | CJE | B-E zero-bias depletion capacitance | F | 0 | 2pF | * |
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* | | VJE | B-E built-in potential | V | 0.75 | 0.6 | |
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* | | MJE | B-E junction exponential factor | - | 0.33 | 0.33 | |
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* | | TF | ideal forward transit time | sec | 0 | 0.1ns | |
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* | | XTF | coefficient for bias dependence of TF | - | 0 | | |
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* | | VTF | voltage describing VBC dependence of TF | V | infinite | | |
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* | | ITF | high-current parameter for effect on TF | A | 0 | | * |
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* | | PTF | excess phase at freq=1.0/(TF*2PI) Hz | deg | 0 | | |
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* | | CJC | B-C zero-bias depletion capacitance | F | 0 | 2pF | * |
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* | | VJC | B-C built-in potential | V | 0.75 | 0.5 | |
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* | | MJC | B-C junction exponential factor | - | 0.33 | 0.5 | |
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* | | XCJC | fraction of B-C depletion capacitance connected to internal base node | - | 1 | | |
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* | | TR | ideal reverse transit time | sec | 0 | 10ns | |
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* | | CJS | zero-bias collector-substrate capacitance | F | 0 | 2pF | * |
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* | | VJS | substrate junction built-in potential | V | 0.75 | | |
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* | | MJS | substrate junction exponential factor | - | 0 | 0.5 | |
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* | | XTB | forward and reverse beta temperature exponent | - | 0 | | |
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* | | EG | energy gap for temperature effect on IS | eV | 1.11 | | |
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* | | XTI | temperature exponent for effect on IS | - | 3 | | |
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* | | KF | flicker-noise coefficient | - | 0 | | |
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* | | AF | flicker-noise exponent | - | 1 | | |
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* | | FC | coefficient for forward-bias depletion capacitance formula | - | 0.5 | | |
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* | | TNOM | Parameter measurement temperature | C | 27 | 50 | | */
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class bjt_model_t : public param_model_t
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{
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public:
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bjt_model_t(device_t &device, const pstring &name, const pstring &val)
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: param_model_t(device, name, val)
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, m_IS(*this, "IS")
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, m_BF(*this, "BF")
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, m_NF(*this, "NF")
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, m_BR(*this, "BR")
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, m_NR(*this, "NR")
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{}
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value_t m_IS; //!< transport saturation current
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value_t m_BF; //!< ideal maximum forward beta
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value_t m_NF; //!< forward current emission coefficient
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value_t m_BR; //!< ideal maximum reverse beta
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value_t m_NR; //!< reverse current emission coefficient
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};
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// Have a common start for transistors
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NETLIB_OBJECT(Q)
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{
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public:
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enum q_type {
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BJT_NPN,
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BJT_PNP
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};
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NETLIB_CONSTRUCTOR(Q)
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, m_model(*this, "MODEL", "NPN")
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, m_qtype(BJT_NPN)
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{
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}
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NETLIB_IS_DYNAMIC(true)
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//NETLIB_RESETI();
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NETLIB_UPDATEI();
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inline q_type qtype() const { return m_qtype; }
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inline bool is_qtype(q_type atype) const { return m_qtype == atype; }
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inline void set_qtype(q_type atype) { m_qtype = atype; }
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protected:
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bjt_model_t m_model;
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private:
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q_type m_qtype;
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};
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NETLIB_OBJECT_DERIVED(QBJT, Q)
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{
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public:
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NETLIB_CONSTRUCTOR_DERIVED(QBJT, Q)
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{ }
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protected:
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private:
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};
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// -----------------------------------------------------------------------------
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// nld_QBJT_switch
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// -----------------------------------------------------------------------------
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/*
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* + - C
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* B ----VVV----+ |
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* | |
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* Rb Rc
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* Rb Rc
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* Rb Rc
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* | |
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* +----+----+
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* |
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* E
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*/
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NETLIB_OBJECT_DERIVED(QBJT_switch, QBJT)
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{
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NETLIB_CONSTRUCTOR_DERIVED(QBJT_switch, QBJT)
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, m_RB(*this, "m_RB", true)
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, m_RC(*this, "m_RC", true)
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, m_BC_dummy(*this, "m_BC", true)
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, m_gB(NETLIST_GMIN_DEFAULT)
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, m_gC(NETLIST_GMIN_DEFAULT)
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, m_V(0.0)
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, m_state_on(*this, "m_state_on", 0)
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{
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register_subalias("B", m_RB.m_P);
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register_subalias("E", m_RB.m_N);
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register_subalias("C", m_RC.m_P);
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//register_term("_E1", m_RC.m_N);
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//register_term("_B1", m_BC_dummy.m_P);
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//register_term("_C1", m_BC_dummy.m_N);
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connect(m_RB.m_N, m_RC.m_N);
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connect(m_RB.m_P, m_BC_dummy.m_P);
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connect(m_RC.m_P, m_BC_dummy.m_N);
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}
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NETLIB_RESETI();
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NETLIB_UPDATEI();
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NETLIB_UPDATE_PARAMI();
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NETLIB_UPDATE_TERMINALSI();
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nld_twoterm m_RB;
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nld_twoterm m_RC;
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// FIXME: this is needed so we have all terminals belong to one net list
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nld_twoterm m_BC_dummy;
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protected:
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nl_double m_gB; // base conductance / switch on
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nl_double m_gC; // collector conductance / switch on
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nl_double m_V; // internal voltage source
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state_var<unsigned> m_state_on;
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private:
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};
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// -----------------------------------------------------------------------------
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// nld_QBJT_EB
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// -----------------------------------------------------------------------------
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NETLIB_OBJECT_DERIVED(QBJT_EB, QBJT)
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{
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public:
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NETLIB_CONSTRUCTOR_DERIVED(QBJT_EB, QBJT)
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, m_gD_BC(*this, "m_D_BC")
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, m_gD_BE(*this, "m_D_BE")
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, m_D_CB(*this, "m_D_CB", true)
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, m_D_EB(*this, "m_D_EB", true)
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, m_D_EC(*this, "m_D_EC", true)
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, m_alpha_f(0)
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, m_alpha_r(0)
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{
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register_subalias("E", m_D_EB.m_P); // Cathode
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register_subalias("B", m_D_EB.m_N); // Anode
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register_subalias("C", m_D_CB.m_P); // Cathode
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//register_term("_B1", m_D_CB.m_N); // Anode
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//register_term("_E1", m_D_EC.m_P);
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//register_term("_C1", m_D_EC.m_N);
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connect(m_D_EB.m_P, m_D_EC.m_P);
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connect(m_D_EB.m_N, m_D_CB.m_N);
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connect(m_D_CB.m_P, m_D_EC.m_N);
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}
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protected:
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NETLIB_RESETI();
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NETLIB_UPDATEI();
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NETLIB_UPDATE_PARAMI();
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NETLIB_UPDATE_TERMINALSI();
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generic_diode m_gD_BC;
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generic_diode m_gD_BE;
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private:
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nld_twoterm m_D_CB; // gcc, gce - gcc, gec - gcc, gcc - gce | Ic
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nld_twoterm m_D_EB; // gee, gec - gee, gce - gee, gee - gec | Ie
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nld_twoterm m_D_EC; // 0, -gec, -gcc, 0 | 0
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nl_double m_alpha_f;
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nl_double m_alpha_r;
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};
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// ----------------------------------------------------------------------------------------
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// nld_Q
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// ----------------------------------------------------------------------------------------
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NETLIB_UPDATE(Q)
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{
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// netlist().solver()->schedule1();
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}
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// ----------------------------------------------------------------------------------------
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// nld_QBJT_switch
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// ----------------------------------------------------------------------------------------
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NETLIB_RESET(QBJT_switch)
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{
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NETLIB_NAME(Q)::reset();
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m_state_on = 0;
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m_RB.set(netlist().gmin(), 0.0, 0.0);
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m_RC.set(netlist().gmin(), 0.0, 0.0);
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m_BC_dummy.set(netlist().gmin() / 10.0, 0.0, 0.0);
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}
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NETLIB_UPDATE(QBJT_switch)
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{
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if (!m_RB.m_P.net().isRailNet())
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m_RB.m_P.solve_now(); // Basis
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else if (!m_RB.m_N.net().isRailNet())
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m_RB.m_N.solve_now(); // Emitter
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else if (!m_RC.m_P.net().isRailNet())
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m_RC.m_P.solve_now(); // Collector
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}
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NETLIB_UPDATE_PARAM(QBJT_switch)
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{
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nl_double IS = m_model.m_IS;
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nl_double BF = m_model.m_BF;
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nl_double NF = m_model.m_NF;
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//nl_double VJE = m_model.dValue("VJE", 0.75);
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set_qtype((m_model.model_type() == "NPN") ? BJT_NPN : BJT_PNP);
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nl_double alpha = BF / (1.0 + BF);
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diode d(IS, NF);
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// Assume 5mA Collector current for switch operation
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m_V = d.V(0.005 / alpha);
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/* Base current is 0.005 / beta
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* as a rough estimate, we just scale the conductance down */
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m_gB = 1.0 / (m_V/(0.005 / BF));
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//m_gB = d.gI(0.005 / alpha);
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if (m_gB < netlist().gmin())
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m_gB = netlist().gmin();
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m_gC = d.gI(0.005); // very rough estimate
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}
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NETLIB_UPDATE_TERMINALS(QBJT_switch)
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{
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const nl_double m = (is_qtype( BJT_NPN) ? 1 : -1);
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const unsigned new_state = (m_RB.deltaV() * m > m_V ) ? 1 : 0;
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if (m_state_on ^ new_state)
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{
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const nl_double gb = new_state ? m_gB : netlist().gmin();
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const nl_double gc = new_state ? m_gC : netlist().gmin();
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const nl_double v = new_state ? m_V * m : 0;
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m_RB.set(gb, v, 0.0);
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m_RC.set(gc, 0.0, 0.0);
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m_state_on = new_state;
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}
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}
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// ----------------------------------------------------------------------------------------
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// nld_Q - Ebers Moll
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// ----------------------------------------------------------------------------------------
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NETLIB_UPDATE(QBJT_EB)
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{
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if (!m_D_EB.m_P.net().isRailNet())
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m_D_EB.m_P.solve_now(); // Basis
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else if (!m_D_EB.m_N.net().isRailNet())
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m_D_EB.m_N.solve_now(); // Emitter
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else
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m_D_CB.m_N.solve_now(); // Collector
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}
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NETLIB_RESET(QBJT_EB)
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{
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NETLIB_NAME(Q)::reset();
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}
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NETLIB_UPDATE_TERMINALS(QBJT_EB)
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{
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const nl_double polarity = (qtype() == BJT_NPN ? 1.0 : -1.0);
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m_gD_BE.update_diode(-m_D_EB.deltaV() * polarity);
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m_gD_BC.update_diode(-m_D_CB.deltaV() * polarity);
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const nl_double gee = m_gD_BE.G();
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const nl_double gcc = m_gD_BC.G();
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const nl_double gec = m_alpha_r * gcc;
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const nl_double gce = m_alpha_f * gee;
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const nl_double sIe = -m_gD_BE.I() + m_alpha_r * m_gD_BC.I();
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const nl_double sIc = m_alpha_f * m_gD_BE.I() - m_gD_BC.I();
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const nl_double Ie = (sIe + gee * m_gD_BE.Vd() - gec * m_gD_BC.Vd()) * polarity;
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const nl_double Ic = (sIc - gce * m_gD_BE.Vd() + gcc * m_gD_BC.Vd()) * polarity;
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m_D_EB.set_mat( gee, gec - gee, -Ie,
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gce - gee, gee - gec, Ie);
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m_D_CB.set_mat( gcc, gce - gcc, -Ic,
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gec - gcc, gcc - gce, Ic);
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m_D_EC.set_mat( 0, -gec, 0,
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-gce, 0, 0);
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}
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NETLIB_UPDATE_PARAM(QBJT_EB)
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{
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nl_double IS = m_model.m_IS;
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nl_double BF = m_model.m_BF;
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nl_double NF = m_model.m_NF;
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nl_double BR = m_model.m_BR;
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nl_double NR = m_model.m_NR;
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//nl_double VJE = m_model.dValue("VJE", 0.75);
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set_qtype((m_model.model_type() == "NPN") ? BJT_NPN : BJT_PNP);
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m_alpha_f = BF / (1.0 + BF);
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m_alpha_r = BR / (1.0 + BR);
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m_gD_BE.set_param(IS / m_alpha_f, NF, netlist().gmin());
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m_gD_BC.set_param(IS / m_alpha_r, NR, netlist().gmin());
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}
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} //namespace analog
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namespace devices {
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NETLIB_DEVICE_IMPL_NS(analog, QBJT_EB)
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NETLIB_DEVICE_IMPL_NS(analog, QBJT_switch)
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}
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} // namespace netlist
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